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1st International Workshop on Bismuth-Containing Semiconductors: Theory, Simulation, and Experiment |
July 14 – 16, 2010
Registration Deadline: May 14, 2010
Workshop organized by The Michigan Center for Theoretical Physics and Materials World Network on III-V Bismide Materials for IR and Mid IR Semiconductors sponsored by the National Science Foundation
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| Invited Speakers |
| Scientific Program |
| Hotel Block |
| Social Activities: Welcoming Reception, Tour & Canoe trip! |
| Travel/Visitor Information |
Workshop Venue:
Palmer Commons
Lecture Hall: Forum Hall (4th floor)
University of Michigan
Central Campus Map
Invited Speakers:
Speaker |
Title |
| GaBiAs epitaxial layers for terahertz optoelectronic applications | |
| Pekka Laukkanen (University of Turku, Finland) |
Unusual Bi-induced surfaces of II-VI semiconductors |
Angelo Mascarenhas ( National Renewable Energy Laboratory, Golden, US) |
Electronic structure of dilute bismide alloys |
| Theory of the electronic structure of dilute bismide alloys | |
Antonio Polimeni (Dipartimento di Fisica, Sapienza Università di Roma, Rome, Italy) |
Unusual compositional dependence of the exciton reduced mass in GaAsBi |
Aaron Ptak (National Renewable Energy Laboratory, Golden, US) |
Growth, incorporation and properties of GaAsBi grown by molecular-beam epitaxy |
Tom Tiedje |
Molecular beam epitaxy growth of GaAs1-xBix alloys with high Bi concentrations |
| Kerstin Volz Philipps-Universität Marburg, Marburg, Germany |
Structural analysis of Bi-containing III/V-compound semiconductors and heterostructures |
| Wladek Walukiewicz (Lawrence Berkeley National Lab) |
Band anticrossing in III-Bi-V alloys |
| Present status and future prospect of Bi-containing semiconductors |
| Workshop Organizers: Joanna Millunchick University of Michigan Shane Johnson Arizona State University |
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Program Committee |
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